Modulation spectroscopy of semiconductors: bulk/thin film, microstructures, surfaces/interfaces and devicesPOLLAK, F. H; SHEN, H.Materials science & engineering. R, Reports. 1993, Vol 10, Num 7-8, pp 275-374, issn 0927-796XArticle

Composition dependence of the spin-orbit splittings in lattice-matched quaternary alloys: generalized Van Vechten-Berolo-Woolley modelPARAYANTHAL, P; POLLAK, F. H.Physical review. B, Condensed matter. 1983, Vol 28, Num 6, pp 3632-3634, issn 0163-1829Article

Novel contactiess mode of electroreflectanceYIN, X; POLLAK, F. H.Applied physics letters. 1991, Vol 59, Num 18, pp 2305-2307, issn 0003-6951Article

Photoreflectance characterization of semiconductors and semiconductor heterostructuresPOLLAK, F. H; SHEN, H.Journal of electronic materials. 1990, Vol 19, Num 5, pp 399-406, issn 0361-5235Article

Modulation spectroscopy characterization of MOCVD semiconductors and semiconductor structuresPOLLAK, F. H; SHEN, H.Journal of crystal growth. 1989, Vol 98, Num 1-2, pp 53-64, issn 0022-0248Conference Paper

Raman scattering in alloy semiconductors: Spatial correlation modelPARAYANTHAL, P; POLLAK, F. H.Physical review letters. 1984, Vol 52, Num 20, pp 1822-1825, issn 0031-9007Article

Raman study of polish-induced strain in <100> GaAs and InPSHEN, H; POLLAK, F. H.Applied physics letters. 1984, Vol 45, Num 6, pp 692-694, issn 0003-6951Article

Modulation spectroscopy in superlatticesPOLLAK, F. H; SHEN, H.Superlattices and microstructures. 1989, Vol 6, Num 2, pp 203-212, issn 0749-6036, 10 p.Article

Piezospectroscopy of a GaAs/Ga_0.73Al_0.27As single quantum well structure : piezoelectric effectsQIANG, H; POLLAK, F. H; SACKS, R. N et al.Solid state communications. 1992, Vol 84, Num 1-2, pp 51-55, issn 0038-1098Article

Comprehensive investigation of polish-induced surface strain in <100> and <111> GaAs and InPHANG, Z; SHEN, H; POLLAK, F. H et al.Journal of applied physics. 1988, Vol 64, Num 6, pp 3233-3242, issn 0021-8979Article

Chlorine evolution and reduction processes at oriented single-crystal RuO₂ electrodesHEPEL, T; POLLAK, F. H; ÓGRADY, W. E et al.Journal of the Electrochemical Society. 1986, Vol 133, Num 1, pp 69-75, issn 0013-4651Article

Irreversible voltammetric behavior of the (100) IrO₂ single-crystal electrodes in sulfuric acid mediumHEPEL, T; POLLAK, F. H; O'GRADY, W. E et al.Journal of the Electrochemical Society. 1985, Vol 132, Num 10, pp 2385-2390, issn 0013-4651Article

Effect of crystallographic orientation of single-crystal RuO₂ electrodes on the hydrogen adsorption reactionsHEPEL, T; POLLAK, F. H; ÓGRADY, W. E et al.Journal of the Electrochemical Society. 1984, Vol 131, Num 9, pp 2094-2100, issn 0013-4651Article

Raman scattering study of the properties and removal of excess Te on CdTe surfacesAMIRTHARAJ, P. M; POLLAK, F. H.Applied physics letters. 1984, Vol 45, Num 7, pp 789-791, issn 0003-6951Article

Piezo-photoreflectance of the direct gaps of GaAs and Ga_0.78Al_0.22AsQIANG, H; POLLAK, F. H; HICKMAN, G et al.Solid state communications. 1990, Vol 76, Num 9, pp 1087-1091, issn 0038-1098, 5 p.Article

Determination of the energy barrier for structural relaxation in amorphous Si and Ge by Raman scatteringTSU, R; GONZALEZ-HERNANDEZ, J; POLLAK, F. H et al.Solid state communications. 1985, Vol 54, Num 5, pp 447-450, issn 0038-1098Article

The potential of zero charge of oriented single-crystal RuO₂ in aqueous electrolytesTOMKIEWICZ, M; HUANG, Y. S; POLLAK, F. H et al.Journal of the Electrochemical Society. 1983, Vol 130, Num 7, pp 1514-1518, issn 0013-4651Article

Pulse-stimulated potentiostatic deposition of silver on single crystal RuO₂ (110) surfaceHEPEL, T; POLLAK, F. H; O'GRADY, W. E et al.Journal of the Electrochemical Society. 1988, Vol 135, Num 3, pp 562-567, issn 0013-4651Article

Temperature dependence of the E_o and E_o + Δ_o gaps of InP up to 600°CHANG, Z; SHEN, H; POLLAK, F. H et al.Solid state communications. 1990, Vol 73, Num 1, pp 15-18, issn 0038-1098Article

Effect of the crystallographic surface structure of the RuO₂ single crystals on the chlorine evolution/reduction reactionsHEPEL, T; POLLAK, F. H; ÓGRADY, W. E et al.Journal of electroanalytical chemistry and interfacial electrochemistry. 1985, Vol 188, Num 1-2, pp 281-285, issn 0022-0728Article

Direct measurement of proton straggling in GaAlAs for nuclear profilingBOND, A. H; PARAYANTHAL, P; POLLAK, F. H et al.Journal of applied physics. 1984, Vol 55, Num 9, pp 3433-3436, issn 0021-8979Article

Observation of excitonic features in ZnSe/ZnMgSSe multiple quantum wells by normalized Kelvin probe spectroscopy at low temperaturesAIGOUY, L; POLLAK, F. H; PETRUZZELLO, J et al.Solid state communications. 1997, Vol 102, Num 12, pp 877-882, issn 0038-1098Article

Contactless evaluation of the common-emitter current gain factor in GaAlAs/GaAs hbts from the photovoltaic effect observed in contactless electroreflectance and photoreflectancePOLLAK, F. H; GAVRILENKO, V. I; KRYSTEK, W et al.SPIE proceedings series. 1997, pp 255-266, isbn 0-8194-2765-9Conference Paper

Electromodulation spectroscopy study of a GaAs/GaAlAs asymmetric triangular quantum well structureQIANG, H; HUANG, Y.-S; POLLAK, F. H et al.Solid-state electronics. 1994, Vol 37, Num 4-6, pp 893-897, issn 0038-1101Conference Paper

External and/or internal stress effects on the optical properties of semiconductor microstructuresPOLLAK, F. H; QIANG, H.Japanese journal of applied physics. 1992, Vol 32, pp 101-106, issn 0021-4922, SUP1Conference Paper